Ferroelectric phenomenon proven viable for oxide electrodes, disproving predictions

Flux-closure domain structures are microscopic topological phenomena found in ferroelectric thin films that feature distinct electric polarization properties. These closed-loop domains have garnered attention among researchers studying new ferroelectric devices, and in the development of thin films for such devices, researchers have thought that contact with commonly used oxide electrodes limits FCD formation. However, a group of researchers has shown otherwise. They report their work in this week's Applied Physics Letters.

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